Search Results

The IRF1404ZPBF is a 40V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rati..

A random selection of Power MOSFET and IGBT transistors. Pack contains approx 20 pieces of different values of transistor. Values and format of transistors contained are random. Datasheet included.IGBT Transistors and Power MOSFET20 piecesRandom valuesGreat for hobby electronics and topping up..

STP14NF10 Power MOSFET series realized with ST Microelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for telecom and..

STP55NF06 Power MOSFETs have been developed using ST Microelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for tele..

This Power P60NF06 MOSFET series realized with ST Microelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer appli..