STP55NF06 N-channel 60 V Power MOSFET

STP55NF06 Power MOSFETs have been developed using ST Microelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements.

STP55NF06 is a N channel power MOSFET supplied in a TO-220 package from ST, one of the industry's leading manufacturers.

The combination of fast switching times, rugged device construction and low ON resistance give a device which is versatile yet cost-effective. 

• Drain-source breakdown voltage 60V
• Drain-source on-resistance 15mR
• Drain current 50A
• Gate source voltage 20V
• Power 110W